v rrm = 50 v - 400 v i f = 6 a features ? high surge capability do-4 package ? types up to 400 v v rrm parameter symbol 1N3879 (r) 1n3880 (r) 1n3881 (r) 1n3882 (r) unit re p etitive p eak reverse v 50 100 200 300 v 1N3879 thru 1n3883r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions silicon fast recover y diode 1n3883 (r) 400 pp voltage v rrm 50 100 200 300 v rms reverse voltage v rms 35 70 140 210 v dc blocking voltage v dc 50 100 200 300 v continuous forward current i f 66 66 a operating temperature t j -65 to 150 -65 to 150 -65 to 150 -65 to 150 c storage temperature t stg -65 to 175 -65 to 175 -65 to 175 -65 to 175 c parameter symbol 1N3879 (r) 1n3880 (r) 1n3881 (r) 1n3882 (r) unit diode forward voltage 1.4 1.4 1.4 1.4 15 15 15 15 a 33 33 ma recovery time maximum reverse recovery time t rr 200 200 200 200 ns thermal characteristics thermal resistance, junction - case r thjc 2.5 2.5 2.5 2.5 c/w 1n3883 (r) 2.5 280 6 400 90 15 i f =0.5 a, i r =1.0 a, i rr = 0.25 a v r = 50 v, t j = 150 c v 3 200 1.4 v r = 50 v, t j = 25 c i f = 6 a, t j = 25 c t c 100 c conditions 90 90 t c = 25 c, t p = 8.3 ms electrical characteristics, at tj = 25 c, unless otherwise specified surge non-repetitive forward current, half sine wave i f,sm a reverse current i r v f 90 90 -65 to 150 -65 to 175 400 www.genesicsemi.com 1
1N3879 thru 1n3883r www.genesicsemi.com 2
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